Enhanced figure of merit in thermal to electrical energy conversion using diode structures
Identifieur interne : 00E021 ( Main/Repository ); précédent : 00E020; suivant : 00E022Enhanced figure of merit in thermal to electrical energy conversion using diode structures
Auteurs : RBID : Pascal:02-0381505Descripteurs français
- Pascal (Inist)
- 8580F, 8460R, 8460N, 8530K, Etude expérimentale, Dispositif thermoélectrique, Conversion thermoélectrique, Injection charge, Conversion thermoionique, Indium composé, Semiconducteur III-V, Mercure composé, Cadmium composé, Semiconducteur II-VI, Diode semiconducteur, Mesure dispositif semiconducteur.
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Abstract
A characterization of the electrical and thermal properties of thermoelectric diode structures indicates that the figure of merit for thermal to electrical energy conversion is significantly enhanced in our devices over thermoelectric values. Enhancements are due to current injection and blockage of the ohmic return current within the devices. The resulting device takes advantage of both thermoelectric and thermionic effects, and can be considered to be a hybrid. Experiments indicate an enhancement as high as a factor of 8 in the effective figure of merit. The best results are consistent with a conversion efficiency on the order of 35% of the Carnot limit. Enhancements have been observed in InSb and in HgCdTe, and we believe that the approach applies generally to all thermoelectric semiconductors. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced figure of merit in thermal to electrical energy conversion using diode structures</title><author><name sortKey="Hagelstein, P L" uniqKey="Hagelstein P">P. L. Hagelstein</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>ENECO, Incorporated, 391-B Chipeta Way, University of Utah Research Park, Salt Lake City, Utah 84108</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>ENECO, Incorporated, 391-B Chipeta Way, University of Utah Research Park, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Kucherov, Y" uniqKey="Kucherov Y">Y. Kucherov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0381505</idno><date when="2002-07-15">2002-07-15</date><idno type="stanalyst">PASCAL 02-0381505 AIP</idno><idno type="RBID">Pascal:02-0381505</idno><idno type="wicri:Area/Main/Corpus">00EF15</idno><idno type="wicri:Area/Main/Repository">00E021</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term><term>Charge injection</term><term>Experimental study</term><term>II-VI semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Mercury compounds</term><term>Semiconductor device measurement</term><term>Semiconductor diodes</term><term>Thermionic conversion</term><term>Thermoelectric conversion</term><term>Thermoelectric devices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8580F</term><term>8460R</term><term>8460N</term><term>8530K</term><term>Etude expérimentale</term><term>Dispositif thermoélectrique</term><term>Conversion thermoélectrique</term><term>Injection charge</term><term>Conversion thermoionique</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Mercure composé</term><term>Cadmium composé</term><term>Semiconducteur II-VI</term><term>Diode semiconducteur</term><term>Mesure dispositif semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A characterization of the electrical and thermal properties of thermoelectric diode structures indicates that the figure of merit for thermal to electrical energy conversion is significantly enhanced in our devices over thermoelectric values. Enhancements are due to current injection and blockage of the ohmic return current within the devices. The resulting device takes advantage of both thermoelectric and thermionic effects, and can be considered to be a hybrid. Experiments indicate an enhancement as high as a factor of 8 in the effective figure of merit. The best results are consistent with a conversion efficiency on the order of 35% of the Carnot limit. Enhancements have been observed in InSb and in HgCdTe, and we believe that the approach applies generally to all thermoelectric semiconductors. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced figure of merit in thermal to electrical energy conversion using diode structures</s1></fA08><fA11 i1="01" i2="1"><s1>HAGELSTEIN (P. L.)</s1></fA11><fA11 i1="02" i2="1"><s1>KUCHEROV (Y.)</s1></fA11><fA14 i1="01"><s1>Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>ENECO, Incorporated, 391-B Chipeta Way, University of Utah Research Park, Salt Lake City, Utah 84108</s1></fA14><fA20><s1>559-561</s1></fA20><fA21><s1>2002-07-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0381505</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A characterization of the electrical and thermal properties of thermoelectric diode structures indicates that the figure of merit for thermal to electrical energy conversion is significantly enhanced in our devices over thermoelectric values. Enhancements are due to current injection and blockage of the ohmic return current within the devices. The resulting device takes advantage of both thermoelectric and thermionic effects, and can be considered to be a hybrid. Experiments indicate an enhancement as high as a factor of 8 in the effective figure of merit. The best results are consistent with a conversion efficiency on the order of 35% of the Carnot limit. Enhancements have been observed in InSb and in HgCdTe, and we believe that the approach applies generally to all thermoelectric semiconductors. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F13</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03C</s0></fC02><fC02 i1="03" i2="X"><s0>001D05I03B</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F03</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8580F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8460R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8460N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8530K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dispositif thermoélectrique</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Thermoelectric devices</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Conversion thermoélectrique</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Thermoelectric conversion</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Injection charge</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Charge injection</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Conversion thermoionique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thermionic conversion</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Mercure composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Mercury compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>II-VI semiconductors</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Diode semiconducteur</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor diodes</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Mesure dispositif semiconducteur</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor device measurement</s0></fC03><fN21><s1>210</s1></fN21><fN47 i1="01" i2="1"><s0>0227M000502</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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